Semiconductor device of DRAM structure - comprising substrate, impurity regions formed on substrate, and conducting layers

摘要

Semiconductor device (I) comprises: (a) a substrate (1) of a 1st conducting type; (b) a 1st and 2nd impurity region (3a, 3b) of a 2nd conducting type formed on the main surface of the substrate on opposite lying sides of an intermediate channel region (16); (c) 3rd impurity region (4) of a 2nd conducting type formed in the 1st impurity region, a gate electrode (6) formed on the channel region with a gate insulating film (5), a 1st conducting layer (8) formed on the 1st and 3rd impurity regions; and (d) a 2nd conducting layer (9) formed on the 1st conducting layer and havng pre-determined impurity regions, where the impurity concn. of the 1st conducting layer is lower than that of the 2nd conducting layer. USE/ADVANTAGE - (I) is a structure of a DRAM.