Method of manufacturing a surface-emitting type semiconductor laser device

摘要

A method of manufacturing a surface-emitting-type semiconductor laser device having a buried structure. A GaAlAs film is used as a mask layer in forming a GaAlAs/GaAs system burying part around a GaAlAs/GaAs system buried part. The mask layer can be formed continuously together with an active layer, a cladding layer and the like which constitute the buried part by means of a crystal growing apparatus for forming the buried part. When the system is etched, the GaAlAs film mask prevents the system buried part from becoming undercut so that the mask has better resistance to peeling during subsequent processing.