| 摘要 |
The first and second intrinsic semiconductor layers of thickness d are formed on a P type semiconductor substrate, keeping a prescribed interval therebetween, whereby a groove of depth d may be made between these layers. A dielectric layer is formed in such a way that it may cover a base and sides of the groove and a surface of the intrinsic semiconductor layer. On this surface, a gate electrode formed of polysilicon exists. Diffusion regions of a source and a drain of depths Xsj and Xdj are formed, in the neighborhood of groove sides, in the first and second intrinsic semiconductor layers (Xsj, Xdj d), resulting in an MOS transistor.
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