Field effect transistor and a fabricating method thereof.

摘要

The invention provides a field effect transistor comprising; a substrate (21), source and drain cap layers (25) and an active gate layer (27) characterised by a void (29) located between the cap layers (25) and between the active gate layer (27) and the substrate (21). A method of manufacture is also provided. Preferably, an insulating layer (23) having a predetermined angle against the main crystal orientation of the substrate (21), is used as an epi-mask to form the void (29). The distance between the cap layers is proportional to the width of the insulating layer and thus the effective channel length can be adjusted independent of the length of the gate electrode. Further, the active layer (27) which is used as the channel is separated from the substrate (21) by the void (29). Accordingly, short channel effects due to leakage current can be prevented. In addition, because the short effective channel can be formed by epitaxy independent of the length of the gate electrode, the manufacturing process is simplified.