Opto-electronic integrated circuit.

摘要

An opto-electronic integrated circuit is formed of a body of a semi-insulating semiconductor material having a plurality of recesses therein extending from a surface thereof and at least one region of n-type conductivity in the body at the surface. A region of a highly conductive semiconductor material of one conductivity type partially fills each recess and extends along a side of the recess to the surface of the body. A separate opto-electronic semiconductor device fills the remaining portion of each recess and extends to the surface of the body. A separate field-effect transistor is in each of the regions. Conductive strips extend over and are electrically insulated from the surface of the body and electrically connect the field-effect transistors and the opto-electronic devices to form a desired circuit. The recesses may extend completely through the body and field-effect transistors may also be provided on the other surface of the body and electrically connected to the opto-electronic devices. The semiconductor regions in the recesses serve as a contact for one side of each of the opto-electronic devices to provide for vertical flow of current through the opto-electronic devices. <IMAGE>