| 发明名称 |
Semiconductor structures including quantum well wires and boxes. |
| 摘要 |
<p>A method of fabricating semiconductor structures, quantum well wires and boxes is described in which interdiffusion in a semiconductor having a compositional profile is enhanced by the presence of defects created by ion implantation in localized regions. A representative structure is shown in Fig. 5.</p> |
| 申请公布号 |
EP0251578(B1) |
申请公布日期 |
1993.12.15 |
| 申请号 |
EP19870305397 |
申请日期 |
1987.06.18 |
| 申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
CIBERT, JOEL BERNARD;GOSSARD, ARTHUR CHARLES;PEARTON, STEPHEN JOHN;PETROFF, PIERRE MARC |
| 分类号 |
H01L21/20;H01L21/18;H01L21/265;H01L21/266;H01L21/338;H01L29/12;H01L29/15;H01L29/778;H01L29/812;H01S5/34;(IPC1-7):H01L21/265;H01L29/36 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
