| 摘要 |
In a photomask, a rectangular pattern to be transferred to a resist film and a plurality of auxiliary patterns are provided in a light shielding layer which is formed on a transparent plate. The auxiliary patterns are spaced from the rectangular light-transmission pattern so that the Fresnel diffraction light from the auxiliary patterns and the zero-order diffraction light from the rectangular light-transmission pattern intensify each other at a position where a pattern corresponding to the rectangular light-transmission pattern is formed on the resist film. Thus, the light intensity of the pattern on the resist film is increased.
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