Method for heat-treating gallium arsenide monocrystals

摘要

A heat-treating method for an indium-doped dislocation-free gallium arsenide monocrystal having a low carbon concentration and grown in the Liquid Encapsulated Czochralski method, comprising a two-step heat treatment: (i) heating the monocrystal at a temperature between 1050 DEG C. and 1200 DEG C. for a predetermined time length, and cooling the monocrystal quickly; and (ii) heating the monocrystal at a temperature between 750 DEG C. and 950 DEG C. for a predetermined time length, and cooling the monocrystal quickly.