| 摘要 |
PURPOSE:To provide a processing method for thin-sliced mono-crystal, with which sliced mono-crystal having a thickness below 100mum can be two-side polished effectively. with good yield, and with high quality of processing. CONSTITUTION:The two surfaces of a thin-sliced mono-crystal wafer 6 of 100m thick or less are polished simultaneously using a carrier 1 of metal, which holds the wafer 6 and in which a guide members 5 made of a fiber-reinforced heat resistant resin are arranged being inserted. Wafer 6 is installed in the carrier with the aid of one of the guide members 5. In this condition, the two surfaces of each wafer 6 are polished simultaneously. |
