发明名称 |
Buffered nondestructive-readout Josephson memory cell with three gates |
摘要 |
A buffered nondestructive-readout Josephson memory cell comprises only three gates and is free of the half-select problem associated with Josephson memories, for both write and read operations. The basic memory cell unit comprises a first interferometer gate and an associated inductor defining a memory storage loop and a second interferometer gate that, together with a second inductor, defines a second loop in which a current pulse can be established only when a circulating current exists in the first loop. A third gate, responsive to a sense line and to the current pulse in the second loop, provides a voltage output which changes based upon whether a "1" or a "0" has been stored in the storage loop. For fabricating a bit-accessible memory, the third gate is further connected in closed circuit relationship with a third inductor which is magnetically coupled with the first gate.
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申请公布号 |
US5229962(A) |
申请公布日期 |
1993.07.20 |
申请号 |
US19910714447 |
申请日期 |
1991.06.13 |
申请人 |
YUH, PERNG-FEI;HANSON, ERIC |
发明人 |
YUH, PERNG-FEI;HANSON, ERIC |
分类号 |
G11C11/44;H03K3/38 |
主分类号 |
G11C11/44 |
代理机构 |
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代理人 |
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地址 |
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