发明名称 |
PRODUCTION OF ANTISTATIC FILM |
摘要 |
PURPOSE:To form an extremely thin antistatic film having a film thickness of nanometer level on the substrate surface without impairing a function native to the substrate by introducing a electrically conductive group into a molecule of a chemical adsorption film using a chemical adsorption method. CONSTITUTION:For example, a hydroxy group of the surface of film substrate 21 is brought into constant with SiCl4 and the obtained product is hydrolyzed to provide a siloxane monomolecular film 23. The film 23 is brought into contact with a nonaqueous solution containing, e.g. HSi(CH3)2(CH2)19SiCl3 to form a chemically adsorbed monomolecuar film 24. Then terminals of the monomolecular film 24 are modified into antistatic groups such as hydroxyl groups 25 by alkali treatment or oxidation treatment.
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申请公布号 |
JPH05179026(A) |
申请公布日期 |
1993.07.20 |
申请号 |
JP19920109875 |
申请日期 |
1992.04.28 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
MINO NORIHISA;SOGA SANEMORI;OGAWA KAZUFUMI |
分类号 |
B32B9/00;B32B27/00;C08J7/04;C08J7/12;C09K3/16;H05F1/02 |
主分类号 |
B32B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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