发明名称 PRODUCTION OF ANTISTATIC FILM
摘要 PURPOSE:To form an extremely thin antistatic film having a film thickness of nanometer level on the substrate surface without impairing a function native to the substrate by introducing a electrically conductive group into a molecule of a chemical adsorption film using a chemical adsorption method. CONSTITUTION:For example, a hydroxy group of the surface of film substrate 21 is brought into constant with SiCl4 and the obtained product is hydrolyzed to provide a siloxane monomolecular film 23. The film 23 is brought into contact with a nonaqueous solution containing, e.g. HSi(CH3)2(CH2)19SiCl3 to form a chemically adsorbed monomolecuar film 24. Then terminals of the monomolecular film 24 are modified into antistatic groups such as hydroxyl groups 25 by alkali treatment or oxidation treatment.
申请公布号 JPH05179026(A) 申请公布日期 1993.07.20
申请号 JP19920109875 申请日期 1992.04.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MINO NORIHISA;SOGA SANEMORI;OGAWA KAZUFUMI
分类号 B32B9/00;B32B27/00;C08J7/04;C08J7/12;C09K3/16;H05F1/02 主分类号 B32B9/00
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