MIXER CIRCUIT USING PULSE-DOPED GAAS MESFET

摘要

A pulse-doped GaAs MESFET is employed as an active device of a mixer circuit. A gate bias point of the pulsedoped GaAs MESFET is set at the vicinity of a transition point of a transconductance-gate voltage characteristic from a portion in which the transconductance increases with the gate voltage to a portion in which the former does not vary with the latter.