发明名称 Integrated circuit produced on semiconductor wafer - has electrical conducting path running over one edge of chip
摘要 Integrated circuit, produced on a semiconductor wafer having a no. of integrated circuits, where each dip supporting the circuit is sepd. by sections of neighbouring chips, comprises an electrical conducting path (9a,9b,9c) running over one edge of the chip (1), the path being interrupted by the section to separate the chip (1) from neighbouring chips (30) in prodn.. Prodn. of the circuit is also claimed. USE - Used in transistors to produce a reverse voltage or in EEPROM cells.
申请公布号 DE4200586(A1) 申请公布日期 1993.07.15
申请号 DE19924200586 申请日期 1992.01.11
申请人 PHILIPS PATENTVERWALTUNG GMBH, 2000 HAMBURG, DE 发明人 ARMBRUST, DIRK, 2000 HAMBURG, DE;TOBERGTE, WOLFGANG, DR., 2083 HALSTENBEK, DE
分类号 H01L23/58 主分类号 H01L23/58
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