发明名称 |
Insulated gate semiconductor device and method of fabricating |
摘要 |
An insulated gate semiconductor device (10) having a pseudo-stepped channel region (20B) between two P-N junctions (21B and 22B). The pseudo-stepped channel region (20B) is comprised of an enhancement mode portion (26B) and a depletion mode portion (28B), the enhancement mode portion (26B) being more heavily doped than the depletion mode portion (28B). One P-N junction (21B) is formed at an interface between a source region (18B) and the enhancement mode portion (26B). The enhancement mode portion (26B) has a substantially constant doping profile, thus slight variations in the placement of the source region (18B) within the enhancement region (26B) do not result in significant variations in the threshold voltage of the insulated gate semiconductor device (10). The insulated gate semiconductor device (10) is well suited for the design of low voltage circuits because of the small variations of the threshold voltage.
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申请公布号 |
US5510648(A) |
申请公布日期 |
1996.04.23 |
申请号 |
US19940301999 |
申请日期 |
1994.09.07 |
申请人 |
MOTOROLA, INC. |
发明人 |
DAVIES, ROBERT B.;ZDEBEL, PETER J.;BUXO, JUAN |
分类号 |
H01L21/336;H01L29/10;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L29/36;H01L29/167 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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