| 摘要 |
<p>PURPOSE:To reduce the number of elements and to attain high integration by using the load of a NAND gate as a constant current source based upon a depression type FET and driving an inverter directly by the output of the NAND gate. CONSTITUTION:The load of the NAND gate using Qn1-Qn3 as a driving FET is used as the depression type n-channel MISFET-Qnd and Vppi is used as a power supply for the NAND gate to drive CMOS inverters (Qp3, Qn5) directly by the output X of the NAND gate. Therefore, Qnd is used as a constant current load and VSS can be precisely obtained by the Qn1-Qn3 having proper size at a selection time. Consequently, layout with narrow pitches can be attained and high integration can be obtained.</p> |
