| 摘要 |
When forming a metallization layer(14), an integrated-circuit semiconductor device fabrication metal such as tungsten, for example, adheres poorly to a dielectric such as, e.g., silicon oxide, and tends to flake off from wafer areas not covered by a glue layer. Processing of the invention prevents such flaking by, first removing the dielectric(11) from the back side, edge, and "clip-mark" areas of the wafer and, second, depositing a glue layer(13) on remaining dielectric(11) on the face of the wafer. Removal of dielectric material(11) is by etching in the presence of a protective layer(12) on the face of the wafer. |
