| 摘要 |
PURPOSE:To improve the writing characteristics of an SRAM memory cell composed of a flip-flop. CONSTITUTION:A low impurity concentration well region 12 is formed under the channel region of a transfer MOS transistor T3. The low impurity concentration well region 12 suppresses the rise of a threshold voltage when a substrate potential is declined. If the rise of the threshold voltage is suppressed, a voltage on digit lines D and CD is sufficiently transmitted to a flip-flop storage node, so that the writing characteristics can be improved. |
