| 摘要 |
<p>PURPOSE:To realize a semiconductor memory circuit whose memory cells can be manufactured with a few number of elements individually and by a standard process, and which does not need any differential amplifiers and reference voltage sources by realizing each bit cell with one memory cell in the case of making them into a cell array. CONSTITUTION:A sense transistor 41 and an injector diode 42 having a common floating gate 43 are connected in series, and a control gate 44 corresponding to the floating gate 43 is provided. And a judging inverter is connected on the output side of the sense transistor 41.</p> |
