| 摘要 |
PURPOSE:To suppress the mutual diffusion of elements constituting adjacent semiconductor layers in a semiconductor device having a structure, in which III-V compound semiconductor layer or IIVI compound semiconductor layer and group TV elements semiconductor layer are laminated by crystal growth techniques such as MBE, MOCVD and MOVPE, and the manufacture of the semiconductor device. CONSTITUTION:Atom diffusion suppression layers 3, 5 of Si, etc., for suppressing the mutual diffusion of atoms constituting III-V compound semiconductor layer of GaAs, GaSb, ZnSe, etc., and II-VI compound semiconductor layer 2, 6 and group IV elements semiconductor layer 4 of Ge, Sn, etc., are inserted into the interface between the compound semiconductor layer 2 or 6 and the elements semiconductor layer 4 and the crystal structure and electrical property of adjacent semiconductor layers are smoothly connected by the atom diffusion suppression layers 3, 5 so that the characteristics of the title semiconductor device are improved. |
