| 摘要 |
<p>PURPOSE:To form the mask having the fine patterns to be determined by the diameter of a beam with which the patterns are irradiated and having high etching resistance and to execute working by using the mask. CONSTITUTION:Gas contg. carbon is supplied onto a sample 9 to be worked and the gaseous raw materials absorbed on the sample 9 are irradiated with the electron beam 5 and ion beam and are thereby cracked or polymerized, by which the carbon is stuck onto the substrate and the mask 13 is formed. The mask 13 having the high etching resistance is easily formed in such a manner. Since the resolution of the patterns is determined by the size of the beam with which the patterns are irradiated and, therefore, the fine patterns are obtd. Further, the process can be executed without exposing the mask to the outdoor air after the formation of the mask and, therefore, the oxidation and contamination are prevented.</p> |
