| 摘要 |
<p>PURPOSE:To manufacture an electric field emitting element which is low in electron emitting voltage and stable in electric property excellently in reproducibility and uniformity. CONSTITUTION:A cold cathode 10, which constitutes an electric field emitting type element, has a sharply pointed projection on at its top, and it has such a shape that the projection and the barrel part are connected to each other in the shape of a continuous curve. In this manufacture, a cavity is formed on a silicon board 1, and a cold cathode is formed by using a mold being formed by oxidizing the cavity. For the manufacture of the electron emitting type element, the interval between the cold cathode 10 and a gate electrode 11 is decided by the thickness, etc., of a silicon oxide film 9, and the positioning is performed by using the etchstop technics by the buried silicon oxide film inside the silicon substrate 1 or electrochemical etching. The electron emission voltage of the cold cathode is low, and the stability and the life of electric properties can be improved. A plurality of electric field emitting type elements, each of which has a pointed cold cathode and a gate electrode installed accurately in the position very near to the cold cathode, can be manufactured equally and excellently in reproducibility.</p> |
