发明名称 |
Method of manufacturing a semiconductor device using an isopropyl alcohol ashing step |
摘要 |
An improved method of manufacturing a semiconductor device includes forming an insulating layer on a substrate, depositing a metal film layer on the insulating layer and depositing a photoresist layer on the metal film layer. The photoresist layer is formed with openings through which a predetermined surface of the metal film layer is exposed. The predetermined surface of the metal film layer is subjected to dry etching so that an underlying portion of the insulating layer is exposed. The remaining portion of the photoresist layer is then subjected to ashing by using an isopropyl alcohol-containing gas to expose the surface of said metal film layer.
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申请公布号 |
US5227341(A) |
申请公布日期 |
1993.07.13 |
申请号 |
US19920831846 |
申请日期 |
1992.02.06 |
申请人 |
SONY CORPORATION |
发明人 |
KAMIDE, YUKIHIRO;KADOMURA, SHINGO;TATSUMI, TETSUYA |
分类号 |
H01L21/302;G03F7/42;H01L21/02;H01L21/3065;H01L21/311;H01L21/3213 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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