| 摘要 |
PURPOSE:To form a memory cell circuit simply by a method wherein a pair of capacitor electrodes are stood on a semiconductor substrate. CONSTITUTION:An element isolation region 12 is formed on a silicon substrate 1. An SiO2 film 18 which is to be gate oxide films and a polycrystalline silicon film are built up on it and gate electrodes 2 and 3 are formed. Then SiO2 is deposited on them to form an SiO2 protective film 6. Then N-type impurity ions such as As ions are implanted through the film 6 to form source/drain regions 4a and 4b. Then polycrystalline silicon is deposited over the surface and patterned to stand capacitor electrodes 5a and 5b which have contacts with drain regions 4b on both sides of the element isolation region 12 on the silicon substrate 1. Then a PZT film 7 is built up over the surface as a ferrodielectric film and patterned so as to fill an interstice between the capacitor electrodes 5a and 5b. After that Al is deposited to form bit lines 8 and 9 and memory cell 16 is constituted. |
