| 摘要 |
PURPOSE:To realize excellent patterning by preventing generation of a mixture layer due to mixture of an upper layer resist and a lower layer resist without limiting using resist when the lower layer resist is patterned by an upper layer resist pattern. CONSTITUTION:A lower layer resist layer 2, an intermediate layer 4 made of a photosensitive plasma polymerized film of plasma polymerized PMMA, etc., and an upper resist layer 3 are sequentially formed on a base 1, and the layers 4, 2 are patterned with the upper layer resist pattern 31 obtained by patterning the layer 3 as a mask. |
