MANUFACTURE OF PRODUCT INCLUDING TIN X LAYER

摘要

PURPOSE: To provide a method for fabricating a semiconductor device including electronic and photoelectronic semiconductor devices based on group III-V, more specifically a fabrication method including a process for forming a TiNx layer on the surface of a semiconductor. CONSTITUTION: A process for forming a patterned TiNx layer (0.9<=x<1.1) on the major surface of a semiconductor substrate 11 comprises a step for bringing the major surface into contact with an atmosphere of organic metal gas precursor containing Ti and N to heat at least a part of the semiconductor substrate 11 at 250-500 deg.C for about 300 sec. The atmosphere, temperature and heating time are selected such that TiNx is deposited at a specified part on the major surface but not deposited substantially on a first material layer 12.