| 摘要 |
PURPOSE:To provide a photoelectric device of high efficiency by using a semiconductor substrate, a superlattice semiconductor layer with uneven surface, and output electrodes for a photoelectromotive force. CONSTITUTION:Light L is incident at a relatively large angle to a slope of a semiconductor layer 11 of a photoelectric device. Part of the light L passes through a surface coating 25 and enters a superlattice structure, and its short- wavelength components produce electron-hole pairs. The electrons and holes move opposite each other in the vertical direction and reach front electrodes 21, 22 and 23 and a back electrode 24 so that an electromotive force is produced. On the other hand, reflected light R passes through the surface coating 25 of the adjacent slope 12 and advances at a large angle into a superlattice structure. If the light L is non-polarized TEM wave such as sunlight, the reflected light R has an electric field vector perpendicular to the lamination of the superlattice. Therefore, the probability of generation of electron-hole pairs due to the transition in a sub-band increases and thus photoelectric effect by long-wavelength components is enhanced. |
