| 摘要 |
PURPOSE:To prevent leakage currents and to improve TDD characteristics by introducing a step for forming an RT film by performing RTN in high- pressure, low-temperature ammonia on a semiconductor substrate. CONSTITUTION:A lower electrode 2 is formed on a semiconductor substrate 1. RTN (rapid thermal nitridation) is performed in high-pressure, lowtemperature ammonia, and an RT film is formed. Then, a silicon nitride film 3 is formed on the RT film. A silicon oxide film 4 is formed by thermal oxidation on the silicon nitride film 3. Then, an upper electrode 5 is formed on the silicon oxide film 4. At this time, the high pressure is 5-10 atmospheric pressure, and the low temperature is 750-900 deg.C. Thus, leakage currents can be prevented, and TDDB (time-dependent dielectric breakdown) characteristics can be improved. |
