发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To improve a high speed of a reading operation. CONSTITUTION:An inverting amplifier 101 switches a switching transistor Q2 in response to a potential of a digit line to vary a voltage of a node SC. The node SC receives a current not only from a load transistor Q3 but also from a charging transistor Q1. Since a gate of the transistor Q1 is connected to a power source CC, a current driving capacity is high and a high speed of a reading operation is improved.</p>
申请公布号 JPH05174594(A) 申请公布日期 1993.07.13
申请号 JP19910356076 申请日期 1991.12.20
申请人 NEC CORP 发明人 KONO SHIGEKI
分类号 G11C17/18;G11C16/06;G11C17/00;H01L27/10 主分类号 G11C17/18
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