| 摘要 |
<p>PURPOSE:To improve the active matrix substrate used for an active matrix type liquid crystal display device. CONSTITUTION:In the active matrix substrate 1 in which a picture element part 2 containing a thin film transistor as a switch and peripheral circuit parts 31, 32 constituted by containing the thin film transistor are formed on the substrate 1, the thin film transistor of the picture element part 2 consists of an offset structure or an LDD structure, and the thin film transistor of the peripheral circuit parts 31, 32 consists of a structure in which end parts of source and drain areas 6S, 6D and an end part of a gate electrode are matched or superposed to each other. Since the thin film transistor of the picture element part 2 consists of the offset structure or the LDD structure, a turn-off current can be reduced, and on the other hand, since the thin film transistor of the peripheral circuit parts 31, 32 consists of a regular structure (structure in which the gate electrode 8 and the source and the drain areas 6S, 6D are matched or superposed to each other), a fall of the turn-on current can be prevented.</p> |
