| 摘要 |
<p>PURPOSE:To easily quantitatively measure oxygen concentration in a highly doped semiconductor crystal substrate by dividing into oxygen of solid solution state and separated oxygen and to realize control of oxygen morphology due to heat treating. CONSTITUTION:A semiconductor crystalline substrate 2 to be evaluated having higher oxygen concentration than that of a low oxygen concentration semiconductor crystalline substrate 1 is adhered to the substrate l having known oxygen concentration by heat treating. Then, after the oxygen concentration of the adhered substrates 1, 2 is measured by a Fourier transform infrared spectrometer, the oxygen concentration of the substrate 1 is subtracted from that of the measured adhered substrates 1, 2 to quantitatively measure the oxygen concentration of the substrate 2 to be evaluated.</p> |
