发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
摘要 PURPOSE:To improve balance of sensitivity, resolution, and heat resistance and to enhance aptitude to microfabrication by incorporating a specified compound, an alkali-soluble resin, and naphthoquinone-1,2-diazido photosensitive agent. CONSTITUTION:The resist pattern is obtained by applying this photoresist composition on a substrate and exposing and developing it, and this composition comprises the alkali-soluble resin and the naphthoquinone-1,2-diazido photosensitive agent and the compound represented by formula I in which R1 is H, methyl, or ethyl: R2 is H or a group of formula II; each of R3-R5 is, independently, H or <=3C alkyl or alkoxy; and n is 1 or 2, and when n is 1, R2 is not H. It is preferred to use the compound of formula I in an amount of 5-25 % of the total amount of the alkali-soluble resin, and the alkali-soluble resin is embodied by novolak resins and the like.
申请公布号 JPH05173326(A) 申请公布日期 1993.07.13
申请号 JP19910341253 申请日期 1991.12.24
申请人 HITACHI CHEM CO LTD 发明人 NUNOMURA MASATAKA;HASHIMOTO MICHIAKI;KASUYA KEI;SASAKI MAMORU
分类号 G03F7/022;H01L21/027 主分类号 G03F7/022
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