| 摘要 |
A method of fabricating a MOSFET of a semiconductor device includes the steps of forming an ion implantation blocking layer on a semiconductor substrate, removing a predetermined portion of the ion implantation blocking layer to form an ion implantation blocking layer pattern for protecting a channel region with regard to lateral diffusion of the ion, implanting the ion into an exposed portion of the semiconductor substrate to form an ion buried layer, forming an active region and isolation region on the semiconductor substrate, and forming a gate insulating layer, gate electrode, source and drain on the active region through conventional methods.
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