Method of manufacturing semiconductor device

摘要

A boron doped amorphous silicon film is formed by CVD under the conditions of a pressure lower than 1 atm and a temperature higher than 200 DEG C. and lower than 400 DEG C. by using at least one of disilane and trisilane, and diborane as source gases. Since the resultant amorphous silicon film can diffuse impurities at a lower temperature than in the case of the polycrystalline silicon film formed by the conventional method, a pn junction much shallower than in the prior art can be formed.