MANUFACTURE OF SEMICONDUCTOR ELEMENT

摘要

PURPOSE:To form high quality capacitor lower electrode film and increase a capacitance and improve a throughput and form a lower electrode having a required film thickness. CONSTITUTION:A polycrystalline silicon film 3 or an amorphous silicon film is formed on a silicon substrate 1 with an oxide film 2 therebetween. Oxygen is introduced into a same chamber and an oxide film 4 which is almost a natural oxide film is formed on the surface of the polycrystalline silicon film 3 or the amorphous silicon film. After that, a rough-surface polycrystalline silicon film 6 which has an unevenness on its surface is formed on the surface of the oxide film 4. A capacitor lower electrode is composed of the rough-surface polycrystalline silicon film 6 and the polycrystalline silicon film 3 or the amorphous silicon film.