MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To provide the large surface area of an electrode by a method wherein a first film having a large unevenness are formed and a film having small unevenness is formed on the first film to form a capacitor lower electrode composed of a double-layer film structure. CONSTITUTION:Amorphous silicon is deposited with SiH4 gas and annealed in vacuum for 15 minutes to form a silicon film 28. Amorphous silicon is deposited with SiH4 gas and annealed in a vacuum for 5 minutes to form a silicon film 29. After that, impurities are implanted into the silicon films 29 and 28 and the silicon films 29 and 28 are patterned to form a capacitor lower electrode 30 composed of a double-layer film structure. The small unevenness of the silicon film 29 is placed on the large unevenness of the silicon film 28 to form the surface of the lower electrode 30. The large surface area of the lower electrode 30 is provided with two-types of the unevennesses.