| 摘要 |
PURPOSE:To realize a switching device which controls the conductivity of an atomic fine wire by externally controlling the electron state of atoms constituting the atomic fine wire. CONSTITUTION:In a switching device, the wave function of a part 13 of an atomic fine wire of a part 14 where a switching gate 12 must have an interaction with the atomic fine wire 11 is changed by impressing a suitable-sized bias to the switching gate 12 with the result that the conductivity of the atomic fine wire 11 changes. Generally, the atomic fine wire 11 gets wave function changed and conductivity decreased by impressing bias to the switching gate; thus, the conductivity of the atomic fine wire 11 can be controlled by potential impressed to the gate 12. Therefore, very high-speed switching is possible, resulting in realization of a switching device using a fine field effect of atomic level. |
