| 摘要 |
PURPOSE:To provide an InSb thin film transferring and forming method by which an InSb thin film which is excellent in crystallinity and high in mobility of electrons and holes can be formed on an element substrate. CONSTITUTION:After successively forming a BaF2 buffer layer 2 and InSb thin film 3 on a thin-film forming substrate 1, the thin film 3 is coated with a cap layer 4 and the thin film 3 is annealed. Then the cap layer 4 is anodically joined with an SiO2 layer 5 on an element substrate 6. Thereafter, the buffer layer 2 is etched off with water or a weak acid and the thin film 3 is transferred to and formed on the substrate 6. |
