| 摘要 |
PURPOSE:To provide a semicondutor device and the manufacturing method thereof, which has a chalcopyrite type or a defective chalcopyrite type compound semiconductor film of a good crystalline quality and has a good quality of heterojunction comprising this compound semiconductor and a III-V compound semiconductor. CONSTITUTION:A semiconductor device having at least a III-V compound semiconductor substrate 1, a modified layer 2 provided on the substrate 1 which has the thickness of at least one atomic layer and has chalcogen and at least one element of the constitutive elements of the III-V compound semiconductor substrate 1, and a compound semiconductor layer 3 formed on the modified layer 2 which has a chalcopyrite type or a defective chalcopyrite type crystalline structure. |
