| 摘要 |
PURPOSE:To provide a semiconductor device and a method for manufacturing the same in which an excellent one-dimensional quantum fine wirings can be formed while applying conventional semiconductor processing technique in a one-dimensional fine wiring MOSFET and a method for manufacturing the same. CONSTITUTION:A thin Si layer 58 is connected to a source and a drain formed between a source and a drain (perpendicular to this paper in the drawing). Insulating films 50, 52 are formed on and underneath the layer 58, and gate oxide films 54, 56 are formed at layer ends not at the source and drain sides of the layer 58. Gates 60, 62 are formed in contact with the films 54, 56 formed at the layer ends not the source and drain sides of the layer 58. |
