| 摘要 |
PURPOSE:To reduce a burden of a strict flatness management required in a creating process and enable an electron concentration to be determined directly. CONSTITUTION:On a GaAs substrate 1, undoped GaAs layers 2a, 2b, 2c, 2d and Si atomic planar doped layers 3a, 3b, 3c of predetermined concentrations are formed repeatedly every predetermined thickness. Thereafter, linear or island-like subdividings are performed by a focused ion beam method or reactive ion beam etching method. |
