| 摘要 |
PURPOSE:To obtain the photoresist composition capable of forming a pattern high in resolution and correct in mask size in a wide range of photomask line widths by incorporating a specified photosensitive material and an alkali-soluble resin. CONSTITUTION:This composition comprises the alkali-soluble resin and at least one of the photosensitive materials represented by formula in which X is -CO-, -C(R1, R2)-; when X is -CO-, each of Y1-Y7 is H, 1-4 C alkyl car alkoxy, 6-10 C aryl or aralkyl or the like, but at least one of them is not H; when Y1 is methyl, each of Y2-Y7 is same as the above expression; when X is -C(R1, R2,)-, and in the case of one of R1 and R2 being H, the other is 3-6 C alkyl, and each of Y1-Y7 is H, 1-4 C alkyl or alkoxy or acyloxy, 6-10 C aryl or aralkyl, halogen, nitro, or cyano. |
