| 摘要 |
A method of CVD deposition for semiconductor manufacture especially suited to the conformal deposition of a film into a semiconductor structure having deep wells and channels. The method includes directing rapid thermal pulses at the semiconductor structure. The thermal pulses heat the semiconductor structure and deposition gas stream to an optimal deposition temperature range. In between the thermal pulses the semiconductor structure and deposition gas stream cool and allow diffusion of the deposition gas stream into the recesses of the semiconductor structure. A frequency of the thermal pulses is from 1 to 100 Hz.
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