| 摘要 |
PURPOSE:To provide a Pd superfine wire, which increases a high-temperature tensile strength (a breaking strength) to make it possible to limit a wire shifting at the time of resin sealing as well as to lower the height of a loop at the time of bonding (a low loop) at moreover, to make the height of a bump constant in the case where the Pd superfine wire is used as one for bump electrode use and is capable of improving the durability and reliability of a semiconductor device. CONSTITUTION:A Pd superfine wire for semiconductor element use is obtained by a method wherein 25 to 1000atppm of low-boiling point I, which has a boiling point lower than the melting point of the parent materials of a high-purity Pd film and a Pd alloy film and is soluble in Pd, and 10 to 200atppm of one kind of an element or two kinds or more of elements of Zr, Y, rare earth elements, Ca, Sr and Hf are made to contain in the high-purity Pd film or the Pd alloy film. |
