发明名称 |
METHOD OF FORMING LATERAL BIPOLAR-TRANSISTOR AND LATERAL P-N-P TRANSISTOR AND BIPOLAR-TRANSISTOR AND LATERAL P-N-P TRANSISTOR |
摘要 |
PURPOSE: To fabricate a bipolar transistor conformable to a method for fabricating an MOS transistor required for fabrication of a BIMOS integrated circuit. CONSTITUTION: A first layer 18 of second conductivity type opposite to first conductivity type is formed along the surface of a semiconductor body of first conductivity type and a first region of second conductivity type, opposite to the conductivity type of the first layer, is formed on a part of the first layer. An aperture 42 is made in a second insulation layer 40 on a part of the first region. A third conductive layer 46 is formed in the aperture and on the second insulation layer. Exposed part of the second insulation layer is removed to expose a part of the first layer. A dopant of second conductivity type is buried in the third conductive layer and the exposed part of the first layer to form a second region 58 of first conductivity type around the first region 32. When the dopant is implanted from the third conductive layer into the first region during anneal process, a third region 60 of second conductivity type is formed in the first region.
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申请公布号 |
JPH05175227(A) |
申请公布日期 |
1993.07.13 |
申请号 |
JP19920155372 |
申请日期 |
1992.06.15 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
ROBAATO KINBARU KUTSUKU;MARIO MAIKERU ARUBAATO PERETSURA |
分类号 |
H01L27/06;H01L21/331;H01L21/8249;H01L29/73;H01L29/735 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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