发明名称 SURFACE REACTION FILM FORMATION APPARATUS
摘要 <p>This invention relates to an apparatus for forming a high-quality thin film at a high speed. This invention is characterized by including an evacuation means, a starting gas supply means, a ceramic filter for blowing out a starting gas, disposed at a position facing a wafer susceptor equipped with a heating means and an activation means for the starting gas in order to improve adsoprtion probability of the starting gas to the wafer surface.</p>
申请公布号 WO1993013244(P1) 申请公布日期 1993.07.08
申请号 JP1988000066 申请日期 1988.01.28
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