| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for producing dielectric thin films having high quality capable of exactly adjusting a bismuth quantity in such a manner that the ratio of the bismuth in the thin films is maintained constant at all times at the time of thin film film formation and improving a film forming speed. SOLUTION: A sputtering apparatus 10 has two target holders 12, 13. A metallic target 14a consisting of the metal bismuth (Bi) is held on the target holder 12 and an oxide target 14b on the target holder 13, respectively. The oxide having a compsn. formula of (Sr, Ca, Ba)y (Ta, Nb)2 O6±d (where 0.6<=y<=1.2, 2.0<=d<=1.0) is used as the oxide target 14b. DC voltage is impressed on the metallic target 14a directly from a DC power source 15. A carbon chip is installed on the metallic target 14a in order to lower the sputtering rate of the bismuth (Bi). High-frequency voltage is impressed on the oxide target 14b from a high-frequency (RF) power source 16. A substrate 18 is not heated at the time of deposition and is subjected to a heat treatment after the film formation, by which ferroelectric properties are obtd.
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