| 摘要 |
<p>A titanium-tungsten barrier layer (202) is sputtered after active areas (122, 132) of a CMOS structure are exposed. An ion implant through the barrier layer and into the active areas disrupts the boundaries between the barrier layer and the underlying active areas. The implant can involve argon or, alternatively, silicon. The resulting structure is annealed. A conductor layer (204) of an aluminium-copper alloy is deposited. An antireflection coating (206) of TiW is deposited. The three-layer structure is then photolithographically patterned to define contacts and local interconnects. The ion implant before anneal results in less contact resistance, which is particularly critical for the barrier layer boundary with positively doped active areas.</p> |
