发明名称 |
Process for passivating semiconductor laser structures with severe steps in surface topography |
摘要 |
The specification describes a process for passivating semiconductor laser structures with severe steps in the surface topography. The technique involves atomic layer deposition to produce the passivating layer which has exceptional coverage and uniformity, even in the case of trench features with trench aspect ratios as large as 5. In addition, the passivation produced by this process has excellent environmental stability, and affords protection against air born contaminant induced degradation.
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申请公布号 |
US5851849(A) |
申请公布日期 |
1998.12.22 |
申请号 |
US19970848736 |
申请日期 |
1997.05.22 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
COMIZZOLI, ROBERT BENEDICT;DAUTARTAS, MINDAUGAS FERNAND;OSENBACH, JOHN WILLIAM |
分类号 |
H01S5/022;H01S5/028;H01S5/323;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/022 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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