| 发明名称 |
Method of crystallizing a silicon film |
| 摘要 |
A film having a high thermal conductivity material such as aluminum nitride is formed on a substrate, and then a silicon film is formed. When a laser light or an intense light corresponding to the laser light is irradiated to the silicon film, since the aluminum nitride film absorbs heat, a portion of the silicon film near the aluminum nitride film is solidified immediately. However, since a solidifying speed is slow in another portion of the silicon film, crystallization progresses from the portion near the aluminum nitride film. When a substrate temperature is 400 DEG C. or higher at laser irradiation, since a solidifying speed is decreased, a crystallinity of the silicon film is increased. Also, when the substrate is thin, the crystallinity of the silicon film is increased.
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| 申请公布号 |
US5851862(A) |
申请公布日期 |
1998.12.22 |
| 申请号 |
US19970839940 |
申请日期 |
1997.04.18 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI, HISASHI;TAKEMURA, YASUHIKO;MIYANAGA, AKIHARU;YAMAZAKI, SHUNPEI |
| 分类号 |
H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L29/78;H01L29/786;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/20 |
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