| 摘要 |
In a semiconductor device including a switching device (1) such as a MOSFET or an IGBT, and an avalanche device (2) protecting the switching device by generating an avalanche current when overvoltage is applied to the switching device, the avalanche device shares a drift layer (10) with the switching device. With this arrangement, the avalanche voltage of the avalanche device follows the changes in the withstanding voltages of the switching device due to the variations in the thickness or impurity concentration of the epitaxial layer or temperature. This makes it possible to reduce the margin between the avalanche voltage of the avalanche device and the withstanding voltage of the switching device, and to protect the switching device from damage. <IMAGE> |
